1600℃ Single-Layer Graphene Growth CVD Furnace

Cxinduction™ presents a 1600℃ Multi-Atmosphere CVD Furnace engineered for reliable, large-area single-layer graphene growth with >95% monolayer coverage in a single run. Our advanced graphite muffle design enables controlled pyrolysis of carbon precursors (CH₄, C₂H₂, etc.) on metal substrates (Cu, Ru, Ir, Ni), producing graphene with:

 Exceptional uniformity

 High carrier mobility

 Low defect density

Key System Advantages

Precision Gas Control: Multi-zone gas distribution ensures precursor uniformity

Dynamic pressure regulation: (0.1-20 kPa) for optimized growth kinetics

Repeatable Process:

Automated multi-cycle etching/redeposition

Substrate-specific recipes for Cu/Ru/Ir/Ni foils (25-1000μm thickness)

High-Yield Design:

Batch processing for 300×600mm foils (custom sizes available)

Applications: Flexible electronics, sensors, composites

Transparent Conductive Films: Touchscreens, OLEDs

Quantum Devices: Hall sensors, spintronics

Energy: Li-metal anodes, supercapacitors

Biomedical: Neural interfaces, drug delivery carriers