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Help Center1600℃ Single-Layer Graphene Growth CVD Furnace
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1600℃ Single-Layer Graphene Growth CVD FurnaceNegotiableMOQ: 1 Combo
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Graphene Technology Single Layer GrapheneUS$ 80 - 115MOQ: 10 Grams
Applications: Flexible electronics, sensors, composites
Transparent Conductive Films: Touchscreens, OLEDs
Quantum Devices: Hall sensors, spintronics
Energy: Li-metal anodes, supercapacitors
Biomedical: Neural interfaces, drug delivery carriers
Cxinduction™ presents a 1600℃ Multi-Atmosphere CVD Furnace engineered for reliable, large-area single-layer graphene growth with >95% monolayer coverage in a single run. Our advanced graphite muffle design enables controlled pyrolysis of carbon precursors (CH₄, C₂H₂, etc.) on metal substrates (Cu, Ru, Ir, Ni), producing graphene with:
Exceptional uniformity
High carrier mobility
Low defect density
Key System Advantages
Precision Gas Control: Multi-zone gas distribution ensures precursor uniformity
Dynamic pressure regulation: (0.1-20 kPa) for optimized growth kinetics
Repeatable Process:
Automated multi-cycle etching/redeposition
Substrate-specific recipes for Cu/Ru/Ir/Ni foils (25-1000μm thickness)
High-Yield Design:
Batch processing for 300×600mm foils (custom sizes available)
Applications: Flexible electronics, sensors, composites
Transparent Conductive Films: Touchscreens, OLEDs
Quantum Devices: Hall sensors, spintronics
Energy: Li-metal anodes, supercapacitors
Biomedical: Neural interfaces, drug delivery carriers
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