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Home > Electrical & Electronics > Electrical Control System > ABB IGBT Module 5SHX0360D0001 Gate Commutated Thyristor

ABB IGBT Module 5SHX0360D0001 Gate Commutated Thyristor

ABB IGBT Module 5SHX0360D0001 Gate Commutated Thyristor thumbnail-2

ABB IGBT Module 5SHX0360D0001 Gate Commutated Thyristor photo-1

ABB IGBT Module 5SHX0360D0001 Gate Commutated Thyristor photo-2

Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)

Key Specifications

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Material:

Other, Global universal model

Condition:

Other, Global universal model

Task:

Other, Global universal model

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Guizhou Yuanmiao Automation Equipment Co., Ltd.

1Yr

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Port of Shipment:

China

Delivery Detail:

Delivery time depends on order quantity.

Product Details
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Material Other, Global universal model

Condition Other, Global universal model

Task Other, Global universal model

Mathematical Model Other, Global universal model

Signal Other, Global universal model

Customized Non-Customized

Structure Other, Global universal model

Rated Voltage 2600V

Current 2645A

Operating Temperature -40℃ to +85℃

Overview

ABB 5SHX0360D0001 is a high-performance Integrated Gate-Commutated Thyristor (IGCT) module, belonging to the ABB 5SHX series. It is specifically designed to handle harsh high-power application scenarios, skillfully integrating the strong large-current carrying capacity of thyristors with the fast switching characteristics of transistors, and plays a key role in the field of power electronics. This module is widely used in various industries such as industrial automation, power systems, machinery manufacturing, metallurgy, mining, and transportation. In industrial automation, it is often used in links such as motor control and lighting control; in power systems, it mainly undertakes the task of reactive power compensation to improve the operating efficiency and stability of power systems; in high-voltage distribution systems, as a core component, it provides overcurrent, short-circuit, and ground fault protection for the system, and is an important equipment to ensure stable power supply.

Working Principle

Structurally, 5SHX0360D0001 integrates a GTO chip, an anti-parallel diode, and a gate drive circuit, and is connected to the gate driver externally in a low-inductance manner. When the module is in the on-state, its operation mode is similar to that of a thyristor, realizing efficient transmission of large currents through a positive feedback mechanism, showing the characteristics of strong current-carrying capacity and low on-state voltage drop. In the turn-off process, the pn junction between the IGCT gate and cathode is turned into reverse bias in advance and exits operation, and the entire device switches to the transistor operating mode. Specifically, by turning on the switch in series with the cathode (usually a MOSFET), the P-base n-emitter is reverse-biased, thereby quickly stopping the cathode injection, and forcing the anode current to be converted into the gate current in a short time (usually within 1μs). As a result, the GTO is transformed into a PNP transistor with a non-contact base region, eliminating the cathode emitter shrinkage effect, making the maximum turn-off current far exceed the rated current of traditional GTOs. Moreover, since the IGCT turns off when the gain is close to 1, the protective snubber circuit can be omitted.

Technical Parameters

Rated Voltage: Generally 2600V (may vary in different application scenarios and versions), with excellent high-voltage withstand capacity, meeting the application requirements of medium and high-voltage power systems.
Rated Current: Up to 2645A, and some data shows it can reach 4500A. Its strong current-carrying capacity enables it to meet the operating needs of high-power equipment.
Peak Forward Current: Approximately 4000A, which can ensure the safe and stable operation of the module when dealing with instantaneous high-current impacts.
On-State Voltage Drop: Usually 2.5V, the low on-state voltage drop helps reduce energy loss and improve the overall efficiency of the system.
Gate Trigger Current: About 0.5A, and only a small trigger current is needed to realize the on-control of the module.
Operating Temperature Range: -40℃ to +85℃; storage temperature range: -40℃ to +125℃. The wide temperature adaptation range allows it to work normally under different ambient temperatures.
Protection Rating: Commonly IP20, which provides a certain degree of protection for the module to prevent foreign objects from entering.
Cooling Method: There are natural cooling, water cooling, etc., which can be flexibly selected according to actual application scenarios and heat dissipation requirements.
Overall Dimensions: Approximately 450mm in length, 260mm in width, and 260mm in height. The module has a compact structural design, facilitating installation and layout in various equipment.

Functional Features

Fast Switching Performance: It has an extremely fast switching speed, capable of completing on and off operations in a very short time, meeting the needs of high-frequency application scenarios, and greatly improving power conversion efficiency. For example, it performs excellently in variable frequency speed regulation systems with extremely high response speed requirements.
High Voltage and Large Current Handling Capacity: It can withstand high voltage and large current, suitable for complex high-voltage and high-power electrical environments, such as high-voltage direct current transmission and large industrial motor drive scenarios, ensuring stable operation of the system.
Low On-State Voltage Drop: The low voltage drop during conduction effectively reduces power loss, improves energy utilization efficiency, and can reduce system energy consumption costs during long-term operation.
High Reliability: Adopting advanced packaging technology and high-quality materials, the module is sturdy and durable, and can work stably in harsh industrial environments (such as high temperature, high humidity, and strong electromagnetic interference), reducing equipment failure rates and maintenance frequency.
Good Compatibility: It can be well adapted to various power system equipment and different circuit topologies. Whether it is a traditional power system or an emerging distributed energy access system, it can be easily integrated and work collaboratively.