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GaN Epitaxial on Si Wafer Manufacturer for RF
US$ 1 - 1
MOQ: 1 Piece
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Brand Name:
Homray-material
Place of Origin:
China
Payment & Shipping
Payment Methods:
Port of Shipment:
shanghai
Delivery Detail:
Delivery time depends on order quantity.
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Brand Name
Homray-material
Place of Origin
China
Homray Material Technology provide Gan Epi wafer on Si for RF HDMT microvave.
The HMT650V product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) Si-wafer for high voltage power switching applications. SPS offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier w/o an AlN spacer layer and the other having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request.
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Business Type
Manufacturer
Year Established
2009
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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