Home > Electrical & Electronics > Electronic Tube & Transistor > Rectifier Diode > GN008020P49 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips Electronic Components ic Parts Supply

GN008020P49 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips Electronic Components ic Parts Supply

GN008020P49 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips Electronic Components ic Parts Supply photo-1
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US$ 0.1 - 10 MOQ: 10 Pieces
Key Specifications
Get Latest Price
Place of Origin:
China
Type:
Signal Diode
Package Type:
Other, new and original package, vacumm package with carton boxes
Payment & Shipping
Payment Methods:
Port of Shipment:
shenzhen, hongkong
Delivery Detail:
3 days
Place of Origin China
Type Signal Diode
Package Type Other, new and original package, vacumm package with carton boxes

GN008020P49 series GaN Internally Matched Power Amplifier
Performance characteristics:
Covering the working frequency band:0.8GHz~2.0GHz
Good 50Ω impedance matching,easy to cascade
Metal ceramic tube sealed package
Screw-fixed flange package or welded pill package

Product introduction:
Electrical performance table:
1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃,pulse width:100us,10% duty cycle.)
 Parameter Test Conditions Minimum Typically maximum Unit
 Saturation power Freq.=0.8GHz~2GHz VGS=-2.5~-3.5V
VDS=+22V
IDsq=40mA
- 46.3 - dBm
 Power Gain - 12.0 - dB
Power Added
Efficiency
- 57.0 - %
 Power Flatness
- 2.0 dB
 Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50  V
Gate-source reverse
  Current
VDS=0V VGS=-10V
- 5 uA
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar
power specifications,higher efficiency and wider bandwidth can be customized.
Working limit parameter:
Source-drain voltage Vds +84V wasted power
(Tc=25℃)
40W
Gate-source voltage Vgs -10V storage temperature -55℃~+125℃
Operating temperature -40℃~+75℃ - -


AFTER-SALES GUARANTEE

1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.

2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.

3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.


Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive, Medical, Agricultural, Consumer electronics grade components. We provide all electronic components that exist. Yingda has always been a customer-driven and quality-focused company and we have more than 10 years experience in this field. You can fully trust us since we have good reputation and always been 100% honest and genuine to our clients.

MADE-IN-CHINA alternative solution provider for brand power tubes (internal matching, external matching), amplifier chips, amplifier modules, etc.

Main products: amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrid microcircuits, infrastructure subsystems, mixers, demodulators, phase shifters, synthesizers, etc.

 


1. Microwave RF Devices MADE-IN-CHINA CNC Phase Shifters

2. High-frequency tubes, In-situ replacement: MA-COM, Motorola, SemeLAB, Microsemi, APT, Infineon, Toshiba, Mitsubishi, Hitachi, NEC

3. Domestic tube shell, substrate, packaging materials

4. Domestic diodes and transistors, In-situ replacement: IR, ON, ST and other imported brands

 

If you have any question or any shortage parts recently, pls feel free to contact me. 

FREE SAMPLS CAN BE PROVIDED FOR FIRST COOPERATION

I'll give you favorable price with short lead time and 365 days warranty. 

We ensure to only provide 100% new & original parts for you, if not refundable. 




Product Frequency Power Package
Gallium Nitride Diode GaN HEMT 1.8~3.8G 6W DFN4540
Gallium Nitride Diode GaN HEMT 1.8~3.8G 15W DFN4540
Gallium Nitride Diode GaN HEMT 0.5-4G 30W JY04f050
Gallium Nitride Diode GaN HEMT 0.5~6G 30W DFN3040
Gallium Nitride Diode GaN HEMT 2.6G 16+32 DFN7065
Gallium Nitride Diode GaN HEMT 3.5G 16+32 DFN7065
Gallium Nitride Diode GaN HEMT 2.6G 32+64 DFN70100
Gallium Nitride Diode GaN HEMT 3.5G 32+64 DNF70100
Gallium Nitride Diode GaN HEMT 5.8G 50W 360
Gallium Nitride Diode GaN HEMT 5.8G 100W 360

Product Tags: electronic components , ic parts supply , Gallium Nitride Diode GaN HEMT , RF Microwave Optical Communication chips , electronic components ic parts supply in russia , 100% new & original parts

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Verified Business License
Business Type
Distributor/Wholesaler
Year Established
2012
Annual Export Value
US$50 Million - US$100 Million
Port of Shipment
shenzhen, hongkong

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