GN0912P46 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication chips electronic components ic parts supply

						GaN HEMT GN0912P46
GN0912P46 series GaN Internally Matched Power Amplifier
Performance characteristics:
Covering the working frequency band:0.96 ~1.22GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package
Product introduction:
Electrical performance table:
1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃，pulse width:200us,10% duty cycle.)
Parameter	Test Conditions			Minimum		Typically	maximum		Unit
Saturation power	Freq.=0.96 ~1.22GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA			46.0		-	-		dBm
Power Gain				20		-	-		dB
Power Added Efficiency				65.0		-	-		%
Power Flatness						-	0.8		dB
Pinch-off voltage	VDS=6V		IDS≤100mA	-5		-	-3.50		V
Gate-source reverse   Current	VDS=0V		VGS=-10V			-	5		uA
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar power specifications,higher efficiency and wider bandwidth can be customized.
Working limit parameter:
Source-drain voltage Vds		+100V			wasted power (Tc=25℃)			29W
Gate-source voltage Vgs		-10V			storage temperature			-55℃~+125℃
Operating temperature		-40℃~+85℃			-			-

AFTER-SALES GUARANTEE

1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.

2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.

3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.

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