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GN013018P48 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips

GN013018P48 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips photo-1
GN013018P48 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips photo-2
GN013018P48 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication Chips photo-3
US$ 0.1 - 10 MOQ: 10 Pieces
Key Specifications
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Place of Origin:
China
Type:
Signal Diode
Package Type:
Other, new and original package, vacumm package with carton boxes
Payment & Shipping
Payment Methods:
Port of Shipment:
shenzhen, hongkong
Delivery Detail:
3 days
Place of Origin China
Type Signal Diode
Package Type Other, new and original package, vacumm package with carton boxes

GaN HEMT GN013018P48
GN013018P48 series GaN Internally Matched Power Amplifier
Performance characteristics:
Covering the working frequency band:1.3~1.8GHz
Good 50Ω impedance matching,easy to cascade
Metal ceramic tube sealed package
Screw-fixed flange package or welded pill package

Product introduction:
Electrical performance table:
1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃,pulse width:100us,10% duty cycle.)
 Parameter Test Conditions Minimum Typically maximum Unit
 Saturation power Freq.=1.3~1.8GHz

VDS=28V
VGS=-2.8~-4V
IDsq=5~100mA
67.0 - - dBm
 Power Gain 15 - - dB
Power Added
Efficiency
65.0 - - %
 Power Flatness
- 1.8 dB
 Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50  V
Gate-source reverse
  Current
VDS=0V VGS=-10V
- 5 uA
2.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃,Continuous Wave.)
 Parameter Test Conditions Minimum Typically maximum Unit
 Saturation power Freq.=1.3~1.8GHz

VDS=28V
VGS=-2.8~-4V
IDsq=5~100mA
15.0 - - dBm
 Power Gain 16 - - dB
Power Added
Efficiency
15.0 - - %
 Power Flatness
- 3.00  dB
 Pinch-off voltage VDS=6V IDS≤100mA -5 - -3.50  V
Gate-source reverse
  Current
VDS=0V VGS=-10V
- 5 uA
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar
power specifications,higher efficiency and wider bandwidth can be customized.
Working limit parameter:
Source-drain voltage Vds +100V wasted power
(Tc=25℃,
VDS=+50V)
140W
wasted power
(Tc=25℃,
VDS=+28V)
12W
Gate-source voltage Vgs -10V storage temperature -55℃~+125℃
Operating temperature -40℃~+75℃ - -


AFTER-SALES GUARANTEE

1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.

2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.

3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.


Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive, Medical, Agricultural, Consumer electronics grade components. We provide all electronic components that exist. Yingda has always been a customer-driven and quality-focused company and we have more than 10 years experience in this field. You can fully trust us since we have good reputation and always been 100% honest and genuine to our clients.

MADE-IN-CHINA alternative solution provider for brand power tubes (internal matching, external matching), amplifier chips, amplifier modules, etc.

Main products: amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrid microcircuits, infrastructure subsystems, mixers, demodulators, phase shifters, synthesizers, etc.

 

1. Microwave RF Devices MADE-IN-CHINA CNC Phase Shifters

2. High-frequency tubes, In-situ replacement: MA-COM, Motorola, lucy(at)yingdainter(dot)com; lucyzhang(at)yingdainter(dot)com;

 

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Product Tags: electronic components , ic parts supply , Gallium Nitride Diode GaN HEMT , RF Microwave Optical Communication chips , electronic components ic parts supply in russia , 100% new & original parts

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Verified Business License
Business Type
Distributor/Wholesaler
Year Established
2012
Annual Export Value
US$50 Million - US$100 Million
Port of Shipment
shenzhen, hongkong

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