Second-hand Vacuum Coating Machine Coater OTFC-1550

Detailed parameters.
Brand Guangchi model OTFC-1550.
Product alias vacuum coating machine type vacuum plating.
Suitable for raw material ABS electroplating position wheel spray plating.
Applicable range of vacuum coating plastics.
Other power of origin > 200W.
Is the import processed and customized?
Product use plastic coating specification 1550x1800mm (H) in vacuum chamber.
Product details.
Commodity description.

Online sale of Guangchi OTFC-1550 vacuum coating machine optical coating machine glass coating machine.

Product name: OTFC-1550DBI Type: 1500DBI.

Original high-end OTFC-1550 optical machine (year: 2015. eleven.

Japanese Electron 16p double Gun, 23 inch Guangchi RF Ion Source.

275 Mechanical pump + Edward matching Roots pump.

HOM2R-VIS350A Optical Film thickness Monitor.

XTC/3+6 point crystal sensor.

1. Product parameters:

1550 X 1800mm (H) in vacuum chamber.

Workpiece rack φ 1400mm workpiece rack speed 10rpm to 30rpm (variable).

Optical thickness controlled HOM2- R-VIS350A.

Wavelength range: 350nm to 1100nm optical film thickness monitor reflective / transmission.

Crystal film thickness meter XTC/3+6 point crystal sensor.

2 sets of evaporation source electron guns.

Ion source 17cmRF ion source.

Mechanical pump: exhaust system 2 diffusion pumps Polycold (or 2 condensation pumps).

two。. Performance: reach the pressure below 7.0x10-5Pa exhaust time 20 minutes (atmospheric pressure, 1.3x10-3Pa) high substrate temperature: 350.
3. Equipment size: about 5500mn (W) X 7200mm () X3700mm (H) 3 phase, 200v, 50/60Hz.
4. The power supply is about 120KVA. The water flow rate is 180L / min and the air pressure is 0. Above 5MPa.
5. The weight is about 11000kg.
1. The basic principle of hollow negative plasma spraying.
When the bottom vacuum pump is high vacuum, the argon cylinder (1-10-2) is introduced from the negative electrode, and the working voltage of starting arc is raised between the negative electrode and the auxiliary anode to make the argon cylinder bright charge and discharge, resulting in low voltage plasma charge and discharge in the hollow negative electrode. The negative electrode temperature rises to 2300-2400K from cold cathode charge and discharge to hot cathode discharge, and hot electrons are sent gradually, charging and discharging to equilibrium state. When entering the reflection vapor, it can be made into a binding film.
II. Measurement and control technology principle of magnetron sputtering.
The vacuum system is pre-pumped to 10-3Pa and then into the vapor (such as an argon cylinder) at a standard pressure of 1-10Pa during this process, a negative voltage is applied to the overall target to cause an arc discharge. When the electronic device accelerates towards the silicon wafer in the positive sense of the electromagnetic field, it collides with the argon molecule and hydrolyzes Ar and another electronic device; the transition of the overall target raw material, more and more secondary electron ionization, the continuous transition of the overall target raw material; the electromagnetic field changes the motion orientation of the electron according to the magnetic field, which limits and increases the trajectory of the electron, thus increasing the probability of gas hydrolysis in the valence electron work.
Working principle of multi-arc ion plating.
The principle is that the cold cathode is equipped with electric arc discharge, and its physical basis is to send it on the spot. When the electroplating material is transferred to the negative electrode, the vacuum system is transferred to anodizing, and the vacuum system is extracted to a high vacuum, turn on the electric level driver and open the contact. At this time, a relatively stable arc discharge occurs between the cathode and the anode, the surface of the negative electrode is filled with rapidly swinging negative poles, some positive ions transition to the negative poles to turn it into a point evaporation source, and the multi-arc ion coating is based on several arc evaporation sources.
Resistor evaporation coating machine.
The thin film material is placed in the volatile ship and in the vacuum system. When a certain vacuum pump is obtained, the thin film material is heated according to the resistor to make it volatilize. When the mean playability of the volatile molecule exceeds the linear specification from the evaporation source to the substrate, the atoms and molecules escape from the evaporation source and reach the substrate to produce the film. In order to make the film thickness symmetrical, the motor driver substrate can be used to rotate, and the film thickness meter can be used to control the film thickness to design a high-quality plastic film.
Fifth, E principle.
The heating of negative tungsten wire sends 0.3EV under the influence of the electrostatic field between the cathode and anode of tungsten wire, the hot electrons of the original mechanical energy accelerate and converge into bundles. In the magnetic field of the magnet coil, the ion beam migrates to the 10KV along the ExB electron energy according to the negative electrode, and according to the offset of the anodizing electron device, the angle of the anodizing electron device is offset by 270, and the film material is transited to make it volatilize.
6. Principle of PVD crystal plating.
The electroplating process parts are placed on the negative electrode of low voltage light charge and discharge, and moderate gas is introduced. Under certain conditions, according to the whole process of chemical change and DC sputtering, the coating is obtained on the surface of the workpiece.