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IRFB4227 Electronic Components MOSFET Transistors

IRFB4227 Electronic Components MOSFET Transistors photo-1
US$ 1.71 - 3.54 MOQ: 1 Piece
Key Specifications
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Brand Name:
STMicroelectronics
Place of Origin:
China
Model Number:
IRFB4227
Payment & Shipping
Payment Methods:
Port of Shipment:
Shenzhen
Delivery Detail:
7 days
Brand Name STMicroelectronics
Place of Origin China
Model Number IRFB4227
Type Other, MOSFET
Package Type Throught Hole

Mfr. #

IRFB4227

 

Manufacturer Infineon

Product Category MOSFET

Technology Si

Mounting Style Through Hole

Package  Case TO-220-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 200 V

Id - Continuous Drain Current 65 A

Rds On - Drain-Source Resistance 24 mOhms

Vgs - Gate-Source Voltage - 30 V, + 30 V

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 330 W

Channel Mode Enhancement

Brand Infineon  IR

Configuration Single

Fall Time 31 ns

Height 15.65 mm

Length 10 mm

Product Type MOSFET

Rise Time 20 ns

Subcategory MOSFETs

Transistor Type 1 N-Channel

Typical Turn-Off Delay Time 21 ns

Typical Turn-On Delay Time 33 ns

Width 4.4 mm

Unit Weight 0.068784 oz

 

Features

Advanced Process Technology

Key Parameters Optimized for PDP Sustain,

 Energy Recovery and Pass Switch Applications

Low EPULSE Rating to Reduce Power

 Dissipation in PDP Sustain, Energy Recovery

 and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for

 Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

 Improved Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

class-D Audio Amplifier 300w-500w(Half-bridge)

 

 

Factory Pack Quantity 50

 

PRICE 1.71-3.54


Product Tags: IRFB4227 , MOSFET , Electronic Component

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Verified Business License
Business Type
Trading Company
Year Established
2011
Annual Export Value
US$5 Million - US$10 Million
Port of Shipment
Shenzhen

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