IPW60R099C7XKSA1 Infineon Technologies MOSFET HIGH POWER_NEW

Mfr. #:

IPW60R099C7XKSA1

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 600 V

Id - Continuous Drain Current: 22 A

Rds On - Drain-Source Resistance: 85 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 3 V

Qg - Gate Charge: 42 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 110 W

Channel Mode: Enhancement

Tradename: CoolMOS

Series: CoolMOS C7

Packaging: Tube

Brand: Infineon Technologies

Configuration: Single

Fall Time: 4.5 ns

Height: 21.1 mm

Length: 16.13 mm

Product Type: MOSFET

Rise Time: 8 ns

factory pack quantity: 240

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 54 ns

Typical Turn-On Delay Time: 11.8 ns

Width: 5.21 mm

Part # Aliases: IPW60R099C7 SP001298004

Unit Weight: 0.211644 oz