NCE P-Channel Enhancement Mode Power MOSFET NCE2301E
Negotiable
/ Unit
3000 Units(Min.Order)
- 1000000 Unit / Units per Month
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Product Details
| Brand Name | NCEPower | Model Number | NCE2301E |
Product Description
Description
The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = -20V,ID =-2.6A RDS(ON) <150mΩ @ VGS=-2.5V RDS(ON) <120mΩ @ VGS=-4.5V ESD Rating: 2000V HBM ● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Load switch
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- Shenzhen haifuli Electronics Co., Ltd
- Contact nameAlina Chat Now
- AddressChuangye Road, Nanshan District, Shenzhen, Shenzhen, Guangdong
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| Digital Isolator | EEPROM | Three Phase | Energy Meter |
| Fuse | IGBT | MOSFET | Sensor |
| Module | MCU |
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