MRF6S27015GNR1

For details, please contact me:

Phone: 18138231576 

          +8618138231576 Mr Weng

FAX: +8675582579250

Landline：075583224875

              +8675583224875 

Email: wengjf@sanpioneer.com

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ADD:  Room 10C3, Zhonghangbeiyuan Building, Futian District, Shenzhen, China

MRF6S27015GNR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Typical  Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ =160 mA, P_out = 3 Watts Avg., Full Frequency Band, Channel Bandwidth =3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

       Power Gain   14 dB

       Drain Efficiency    22%

       ACPR @ 5 MHz Offset -45 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 5:1 VSWR, @ 28 Vdc,  2600 MHz, 15 Watts CW Output Power

Features

1. Characterized  with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use

2.  Qualified Up to a Maximum of 32 V_DD Operation

3.  Integrated ESD Protection

4. 225°C Capable Plastic Package      

5. RoHS Compliant

6. In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.