FHX35LG

For details, please contact me:

Phone: 18138231576

          +8618138231576 Mr Weng

FAX:  +8675582979250

Landline：075583224875

              +8675583224875 

Email: wengjf@sanpioneer.com

QQ: 964355398

ADD:  Room 10C3, Zhonghangbeiyuan Building, Futian District, Shenzhen, China

FHX35LG

The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2 to 18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications.

FEATURES

1. Low Noise Figure: 1.2dB (Typ.)@f=12GHz

2. High Associated Gain: 10.0dB (Typ.)@f=12GHz

3. L_g ≤ 0.25um, W_g = 280um

4. Gold Gate Metallization for  High Reliability

5. Cost Effective Ceramic  Microstrip (SMT) Package

6. Tape and Reel Packaging  Available