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SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 Mm2

SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 Mm2 photo-1
SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 Mm2 photo-2
Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)
Key Specifications
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Model Number:
SG01S-5
Usage:
Other, UV Photodiode
Theory:
Optical Sensor
Payment & Shipping
Payment Methods:
Port of Shipment:
HK
Delivery Detail:
7 days
Model Number SG01S-5
Usage Other, UV Photodiode
Theory Optical Sensor

SG01S-5

Broadband SiC based UV photodiode A = 0.06 mm2


◆ SG01S-5 UV Photodiode eneral features


Properties of the SG01S-5 UV Photodiode

• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 0.06 mm2
• TO5 hermetically sealed metal housing, short cap, 1 isolated p
• 10mW/cm2 peak radiation results a current of approx. 780 nA


About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low,
Options 
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


◆ SG01S-5 UV Photodiode Nomenclature


◆ SG01S-5 UV Photodiode SpecIfication


Parameter Symbol Value Unit




Spectral Characteristics


Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010




General Characteristics (T=25°C)


Active Area A 0.06 mm2
Dark Current (1V reverse bias) Id 0.2 fA
Capacitance C 15 pF
Short Circuit (10mW/cm2 at peak) Io 780 nA
Temperature Coefficient Tc %/K




Maximum Ratings


Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V


Product Tags: UV Photodiode , UV Sensor

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Business Type
Distributor/Wholesaler
Year Established
2014
Overseas Office
Yes
Total Employees
101 - 200 People