Week technology ltd: Shenzhen, Guangdong, China; Main products: Gas Sensor, Temperature Sensor, Humidity Sensor, Pressure Sensor, Ultrasonic Sensor, UV Sensor, Wind Speed sensor, Liquid Level Sensor

Home > Products > UV Sensor > SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 mm2

SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 mm2

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Product Details

Model Number	SG01S-5		Usage	Other, UV Photodiode
Theory	Optical Sensor

Product Description

SG01S-5

Broadband SiC based UV photodiode A = 0.06 mm2

◆ SG01S-5 UV Photodiode eneral features

Properties of the SG01S-5 UV Photodiode

• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 0.06 mm2
• TO5 hermetically sealed metal housing, short cap, 1 isolated p
• 10mW/cm2 peak radiation results a current of approx. 780 nA

About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low,<0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

◆ SG01S-5 UV Photodiode Nomenclature

◆ SG01S-5 UV Photodiode SpecIfication

Parameter	Symbol	Value	Unit

Spectral Characteristics
Typical Responsivity at Peak Wavelength	Smax	0.130	AW-1
Wavelength of max. Spectral Responsivity	λmax	280	nm
Responsivity Range (S=0.1*Smax)	–	221 … 358	nm
Visible Blindness (Smax/S>405nm)	VB	> 1010	–

General Characteristics (T=25°C)
Active Area	A	0.06	mm2
Dark Current (1V reverse bias)	Id	0.2	fA
Capacitance	C	15	pF
Short Circuit (10mW/cm2 at peak)	Io	780	nA
Temperature Coefficient	Tc	< 0.1	%/K

Maximum Ratings
Operating Temperature	Topt	-55 … +170	°C
Storage Temperature	Tstor	-55 … +170	°C
Soldering Temperature (3s)	Tsold	260	°C
Reverse Voltage	VRmax	20	V

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Product Categories

Gas sensor	Fiber Optic Sensor	Temperature & Humidity Sensor	Liquid level sensor
Pressure Sensor	UV Sensor	Ultrasonic Sensor	Water Quality Sensor
Photosensors	Gas Flow Sensor	Angle Sensors	Wind Speed Sensor
Gas Detectors / Alarm / Monitor	Pyrometers	Instruments	Proximity Sensor
Others	Mass Flow Meters

SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 mm2

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