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SG01S-18S Broadband SiC Based UV Photodiode A = 0.06 Mm2

SG01S-18S Broadband SiC Based UV Photodiode A = 0.06 Mm2 photo-1
Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
Sglux
Place of Origin:
Germany
Model Number:
SG01S-18S
Payment & Shipping
Payment Methods:
Port of Shipment:
HK
Delivery Detail:
7 days
Brand Name Sglux
Place of Origin Germany
Model Number SG01S-18S
Usage Other, UV Photodiode
Theory Optical Sensor

SG01S-18S
Broadband SiC based UV photodiode A = 0.06 mm2


◆ SG01S-18S UV Photodiode General Feature


Properties of the SG01S-18S UV Photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 0.06 mm2
• TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
• 10mW/cm2 peak radiation results a current of approx. 780 nA


About the material Silicon Carbide (SiC)

SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise.These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffiient of signal(responsivity) is also low,


Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fitered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


◆ SG01S-18S UV Photodiode Nomenclature

 


 ◆ SG01S-18S UV Photodiode SpecIfication

Parameter Symbol Value Unit




Spectral Characteristics


Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010




General Characteristics (T=25°C)


Active Area A 0.06 mm2
Dark Current (1V reverse bias) Id 0.2 fA
Capacitance C 15 pF
Short Circuit (10mW/cm2 at peak) Io 780 nA
Temperature Coefficient Tc %/K




Maximum Ratings


Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V


Product Tags: UV Photodiode , UV Sensor

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Business Type
Distributor/Wholesaler
Year Established
2014
Overseas Office
Yes
Total Employees
101 - 200 People