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SG01L-B18 UVB-only SiC Based UV Photodiode

SG01L-B18 UVB-only SiC Based UV Photodiode photo-1
US$ 0.001 - 0.01 MOQ: 1 Piece
Key Specifications
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Brand Name:
Sglux
Place of Origin:
Germany
Model Number:
SG01L-B18
Payment & Shipping
Payment Methods:
Port of Shipment:
HK
Delivery Detail:
Delivery time depends on order quantity.
Brand Name Sglux
Place of Origin Germany
Model Number SG01L-B18
Usage Other, UV Sensor
Theory Optical Sensor

SG01L-B18

UVB-only SiC based UV photodiode A = 1.0 mm2


◆ SG01L-B18 UV Photodiode General Features


Properties of the SG01L-B18 UV Photodiode
• UVB-only sensitivity, PTB reported high chip stability
• Active Area A = 1.0 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 12.5 nA


About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low,


Options 
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


◆ SG01L-B18 UV Photodiode Specifications


Parameter Symbol Value Unit




Spectral Characteristics


Typical Responsivity at Peak Wavelength Smax 0.125 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0,1*Smax) 231 … 309 nm
Visible Blindness (Smax/S>405nm) VB > 1010




General Characteristics (T=25°C)


Active Area A 1.0 mm2
Dark Current (1V reverse bias) Id 3.3 fA
Capacitance C 250 pF
Short Circuit (10µW/cm2 at peak) Io 12.5 nA
Temperature Coefficient Tc %/K




Maximum Ratings


Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V


Product Tags: UV Photodiode , UV Sensor

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Business Type
Distributor/Wholesaler
Year Established
2014
Overseas Office
Yes
Total Employees
101 - 200 People

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