808 nm Laser Diode K81S09W-5.00W

Specifications (25℃)

Symbol

Unit

K81S09W-2.50W

K81S09W-5.00W

K81S09W-6.00W

K81S09W-10.00W

Optical data

CW-output power

Po

W

2.5

5

6

10

Center wavelength (1)

lc

nm

808

Tolerance of l

-

nm

±3, ±10

Spectral width (FWHM)

△l

nm

<3

Temperature drift of l

-

nm/℃

~0.3

Emitting area

Dimensions

W×H

µm

150×1

200×1

200×1

400×1

FWHM

beam divergence

Parallel to junction

θ∥

degree

10

Perpendicular to junction

θ⊥

degree

<40，<10，<2

Electrical data

Operation current

Iop

A

2.5

5.3

6.5

10.0

Threshold current

Ith

A

0.4

0.6

0.6

1.5

Conversion efficiency(1)

η

%

40~55

Slope efficiency(2)

ηD

W/A

0.8~1.2

Operation voltage

Vop

V

1.8

2.1

2.1

2.2

Reverse voltage

Vre

V

2

PD data

Current

Imo

mA

0.20~1.50

TEC data

Max. current

It

A

4.0

4.0

4.0

6.0

Max. voltage

Vt

V

9.8

Thermistor data(2)

Thermistor

R0

(K Ω)/β(25℃)

10±5%/3477

Others

Operation temperature

Top

℃

10~30

Storage temperature

Tst

℃

-20~80

Expected lifetime

MTBF

h

>10,000

Dimensions

-

mm

~44.5×31.8×18.0

Lead soldering temperature

Tis

℃

260(10 sec.)