1kW/2450MHz Microwave Plasma CVD
Specifications
GMPS-2010K RectangularCavity Microwave Plasma System.GMPS-2010K RectangularCavity Microwave Plasma System
Features:
1.0kW/2450MHz microwave power source with programmable control system provides adjustable output power from 0.1 to 1.0kW with low ripple and precisely regulation.
Circulator, tuner, sampling dummy load and waveguides consist of transmission system, which insure isolation between magnetron and reflecting wave, and regulate best matching.
The special designed wave guide with slots coupled large area microwave rectangular cavity as the reacting applicator is the outstanding one we recent developed. It has very promise to excite an intense spatially stable plasma where the substrates be placed and realize a large area substrates films MPCVD with stable operation.
Built in high vacuum system and two fine MFC systems.
With Sample supporter moveable and temperature auto control
Application: MPCVD research and middle-mass production for diamond or various kinds of films.
Specification | |
Frequency |
2450±50MHz |
Power Output |
0.3-1kW Continue Adjustable |
Power Stability |
< ±2% ( at specific Power level ) |
Wave guide |
WR-340 with FD-340 Flange |
Control Interface |
RS-232 Program Controllable |
Power Supply |
380V±10% 3 Phase 4 Line |
Cooling Water |
> 3 L / min |
System VSWR |
≤ 1.2 |
Leakage |
< 5mW/cm2 ( IEC Standard ) |
Window Dimension |
440L×200W×15H mm |
Vacuum System |
P < 1×10-1 Pa. |
Gas MFC System |
2 MFC ( Mass Flow Control ) |
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