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High-purity Fused Silicon Wafer P-type N-type Crystal Direction of 100,110 for Scientific Research

High-purity Fused Silicon Wafer P-type N-type Crystal Direction of 100,110 for Scientific Research photo-1
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High-purity Fused Silicon Wafer P-type N-type Crystal Direction of 100,110 for Scientific Research photo-3
High-purity Fused Silicon Wafer P-type N-type Crystal Direction of 100,110 for Scientific Research photo-4
US$ 2 - 3 MOQ: 10 Pieces
Key Specifications
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Place of Origin:
Jiangsu, China
Brand Name:
zhongding
Model Number:
P/N
Payment & Shipping
Payment Methods:
Port of Shipment:
Jiangsu
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Jiangsu, China
Brand Name zhongding
Model Number P/N
Product Description
Product name:
High-purity fused silicon wafer P-type N-type crystal direction of 100,110 for scientific research

Growth mode:
Straight pulling single crystal (CZ)
Diameter and tolerance:
150±0.3mm
Doping type:
phosphorus, arsenic, antimony
Orientation
100 110 111
Resistivity:
0.001-50(Ω•cm)customizable
TIR:
<3μm
TTV:
<5μm
BOW:
<10μm
Ra:
<0.5nm
Pewaferr:
< 10 (for size > 0.3μm)
Thickness:
550-600μm
Notch:
flat
finshed of edge
Finshed/as etched
Edge profile:
Round
Scratch:
1cm<3EA
Edge defect:
<1mm
Back:
Polished
Particle
no contro;
Detailed Images
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Business Type
Manufacturer, Trading Company
Year Established
2009
Factory Size
1,000-3,000 square meters
Total Employees
11 - 50 People

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