Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > 8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research

8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research

8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research thumbnail-1
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research thumbnail-2
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research thumbnail-3
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research thumbnail-4
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research photo-1
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research photo-2
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research photo-3
8 Inch P High Purity Single Crystal Silicon Wafer Diameter 200mm Thickness 650-725um Crystal to 100, 110 for Research photo-4
US$ 2 - 3 MOQ: 10 Pieces
Key Specifications
Get Latest Price
Place of Origin:
Jiangsu, China
Brand Name:
zhongding
Model Number:
P/N
Contact Supplier Request Quote Chat Now
Yangzhou Zhongding Solar Energy Co., Ltd.
Payment & Shipping
Payment Methods:
Port of Shipment:
Jiangsu
Delivery Detail:
Delivery time depends on order quantity.

Related Products

  • Product Details

  • Company Profile
  • Contact Us
Place of Origin Jiangsu, China
Brand Name zhongding
Model Number P/N
Product Description
Product name:
8 inch P high purity single crystal silicon wafer diameter 200 thickness 650-725 crystal to 100, 110 for research
Growth mode:
Straight pulling single crystal (CZ)
Diameter and tolerance:
200±0.3mm
Doping type:
boron
Orientation:
<111><100><110>
Resistivity:
0.001-50(Ω•cm)customizable
TIR:
<3μm
TTV:
<10μm
BOW:
<10μm
Ra:
<0.5nm
Pewaferr:
< 10 (for size > 0.3μm)
Thickness:
650-725μm
Notch:
notch
finshed of edge
Finshed/as etched
Edge profile:
Round
Scratch:
1cm<3EA
Edge defect:
<1mm
Back:
No control
Detailed Images
Tips

The company supports free to take samples of freight paid by the buyer

Company

Send Inquiry to This Supplier

Message
0/5000

Want the best price? Post an RFQ now!
Yangzhou Zhongding Solar Energy Co., Ltd.
Business Type
Manufacturer, Trading Company
Year Established
2009
Factory Size
1,000-3,000 square meters
Total Employees
11 - 50 People
Contact Supplier Request Quote Chat Now

You May Also Like

Product Categories

Related Searches

Recommended Categories

Explore top categories and find suppliers for your specific needs
N-type Semiconductor N-type Semiconductor
Other Semiconductors Other Semiconductors