Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > Three-inch P-type Single-sided Polished Silicon Wafer Crystal to <111> <100> <110> Thickness 300-400um for Research

Three-inch P-type Single-sided Polished Silicon Wafer Crystal to <111> <100> <110> Thickness 300-400um for Research

Three-inch P-type Single-sided Polished Silicon Wafer Crystal to <111>  <100>  <110> Thickness 300-400um for Research photo-1
Three-inch P-type Single-sided Polished Silicon Wafer Crystal to <111>  <100>  <110> Thickness 300-400um for Research photo-2
Three-inch P-type Single-sided Polished Silicon Wafer Crystal to <111>  <100>  <110> Thickness 300-400um for Research photo-3
Three-inch P-type Single-sided Polished Silicon Wafer Crystal to <111>  <100>  <110> Thickness 300-400um for Research photo-4
US$ 2 - 3 MOQ: 10 Pieces
Key Specifications
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Place of Origin:
Jiangsu, China
Brand Name:
zhongding
Model Number:
P/N
Payment & Shipping
Payment Methods:
Port of Shipment:
Jiangsu
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Jiangsu, China
Brand Name zhongding
Model Number P/N
Product Description
Product name:
Three-inch P-type single-sided polished silicon wafer crystal to <111> <100> <110> Thickness 300-400mm for research
Growth mode:
Straight pulling single crystal (CZ)
Diameter and tolerance:
76.2±0.3mm
Doping type:
boron

Orientation:
<111><100><110>
Resistivity:
0.001-50(Ω•cm)customizable
TIR:
<3μm
TTV:
<10μm
BOW:
<10μm
Ra:
<0.5nm
Pewaferr:
< 10 (for size > 0.3μm)
Thickness:
300μm-400μm
Edge profile:
Round
Back:
No control
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Business Type
Manufacturer, Trading Company
Year Established
2009
Factory Size
1,000-3,000 square meters
Total Employees
11 - 50 People

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