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2" 3" 4" 4H 6H Silicon Carbide SiC Wafer

Atecom Technology Co., Ltd.
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Negotiable MOQ: 25 Pieces (Price negotiable depending on order volume and customization)
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Place of Origin:
Taiwan, China
Brand Name:
Atecom
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Payment & Shipping
Payment Methods:
Port of Shipment:
Taipei
Delivery Detail:
Delivery time depends on order quantity.

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Place of Origin Taiwan, China
Brand Name Atecom

Specifications

2" 3" 4" 4H 6H Silicon Carbide SiC Wafer
Diameter 2in ~ 4in
Type: N/SI:4H and 6H
Thickness: 330~430um

2" 3" 4" 4H 6H Silicon Carbide SiC Wafer

 

Diameter2”, 3”, 4”
Orientation(0001) Off 0 or 4 degree
TypeN/4H,N/6H,SI/4H,SI/6H
Thickness350~550 um, customizable
Growth MethodPVT

Micropepe Density

<100
SurfaceEPI-Ready Polised Wafer

 

 

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2" 3" 4" 4H 6H Silicon Carbide SiC Wafer

 

 

 

 

 

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Atecom Technology Co., Ltd.
Business Type
Manufacturer, Trading Company, Agent
Year Established
1998
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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