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Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > 2" 3" 4" 4H 6H Silicon Carbide SiC Wafer
2" 3" 4" 4H 6H Silicon Carbide SiC Wafer
Negotiable
MOQ: 25 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Place of Origin:
Taiwan, China
Brand Name:
Atecom
Payment & Shipping
Payment Methods:
Port of Shipment:
Taipei
Delivery Detail:
Delivery time depends on order quantity.
Related Products
Place of Origin
Taiwan, China
Brand Name
Atecom
Specifications
2" 3" 4" 4H 6H Silicon Carbide SiC WaferDiameter 2in ~ 4in
Type: N/SI:4H and 6H
Thickness: 330~430um
2" 3" 4" 4H 6H Silicon Carbide SiC Wafer
| Diameter | 2”, 3”, 4” |
| Orientation | (0001) Off 0 or 4 degree |
| Type | N/4H,N/6H,SI/4H,SI/6H |
| Thickness | 350~550 um, customizable |
| Growth Method | PVT |
Micropepe Density |
<100 |
| Surface | EPI-Ready Polised Wafer |
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Business Type
Manufacturer, Trading Company, Agent
Year Established
1998
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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