Silicon Ingot
Specifications
We have advanced equipment and Wafer production capacity, reliable property and outstanding quality ensure high EFF solar cells.Sepcification:
6N minimum, Mono, Solar grade
Cristal growth method: CZ
Dopant: P/Boron
Dislocation density: less than 100 cm2
Orientation: 100 +- 3 face and diagonal
Oxygen concentration: less than 1.0x1018 atm os/cm 3
Carbon concentration: less than 3.0x1016 atm os/cm 3
Resistivity: 0.5-3
Lifetime: 10us
Size: 153 +-3mm
Length: 200mm - 400mm
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