Solar Wafer
Specifications
We have advanced equipment and Wafer production capacity, reliable property and outstanding quality ensure high EFF solar cells.
156 Multi crystalline Wafer Specification |
Growth Method |
DSS |
Conductive Type |
P |
Dopant |
B |
Resistivity(ρ) |
0.5 -3.0Ω·cm or 3.0-6.0Ω·cm |
Minority Carrier Lifetime |
≥2μs measured in wafer |
Oxygen Content (Oi) |
≤1.0*1018 /cm3 |
Carbon Content(C) |
≤8.0*1017/cm3 |
Dimension |
156*156±0.5mm |
Square Sides Angle |
45° ± 10° |
Streight Sections Length Deviation |
0.5-1 mm |
Thickness |
200±20 μm |
TTV |
≤30μm |
Saw Mark |
≤20μm |
Chips |
Depth<0.3mm;Length<0.5mm |
Micro Cracks |
Not Allowed |
Appearance |
No Stain, No Edge Breakage, No Chips |
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