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Home > Electrical & Electronics > Semiconductor > Other Semiconductors > JHBF 1060nm PM Butterfly SOA (Semiconductor Optical Amplifier)

JHBF 1060nm PM Butterfly SOA (Semiconductor Optical Amplifier)

JHBF 1060nm PM Butterfly SOA (Semiconductor Optical Amplifier) thumbnail-3

JHBF 1060nm PM Butterfly SOA (Semiconductor Optical Amplifier) photo-1

JHBF 1060nm PM Butterfly SOA (Semiconductor Optical Amplifier) photo-2

JHBF 1060nm PM Butterfly SOA (Semiconductor Optical Amplifier) photo-3

Product Spotlights

The products feature high gain, high power, low power consumption, and polarization maintenance.

US$ 1624 ≥1 Piece

Key Specifications

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Tianjin Jianhe Bafang Optoelectronic Technology Co., Ltd.

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Port of Shipment:

China

Delivery Detail:

Delivery time depends on order quantity.

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Product Specifications

Swept-source, tunable laser
OCT medical applications

Product Specifications

Parameter	Symbol	Working conditions	Min	Typ	Max	Unit
ASE centre wavelength	λ_ASE	25℃, If=400mA	---	1070	---	nm
Operating Wavelength	λ	25℃, If=400mA	---	1060	---	nm
-3dB Gain Bandwidth	Δλ	Pin=-20dBm	---	50	---	nm
Maximum Optical Power	P_max	If=400mA, Pin=5dBm@1060nm	---	15	---	dBm
Small Signal Gain	SSG	If=400mA, Pin=-25dBm@1060nm	---	25	---	dB
Polarization Dependent Gain	PER	25℃, If=400mA	---	10	---	dB
Noise Figure	NF	25℃, If=400mA@1060nm	---	8	10	dB
Working current	I_f	---	---	400	600	mA
Forward Voltage	V_f	---	---	---	2	V
TEC Current	I_TEC	---	---	---	1.8	A
TEC Voltage	V_TEC	---	---	---	3.4	V
Thermistor Resistance	R_therm	T=25℃	9.5	10	10.5	KΩ
Thermistor Current	I_therm	---	---	---	5	mA
Hermeticity1		T=25℃	1*10-12	1*10-11	1*10-8	Pa.m3/s
Operating Temperature	T_C	I=Iop	-10	---	70	°C
Storage Temperature	T_stg	---		---	85	°C
Total Power	P	---	---	---	4	W

Note 1: The hermeticity value is determined for the tube housing package, excluding any residual interference from outside the housing as per the test results.

Product Tags: SOA , 1060nm SOA , Semiconductor Optical Amplifier