NCE P-Channel Enhancement Mode Power MOSFET NCE2301A
Description
The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
●VDS = -15V,ID = -3.0A RDS(ON)
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM applications
● Load switch
● Power management
Send Inquiry to This Supplier
You May Also Like
-
NCE P-Channel Enhancement Mode Power MOSFET NCE2301ENegotiableMOQ: 3000 Units
-
NCE N-Channel Super Trench II Power MOSFET NCEP026N10NegotiableMOQ: 3000 Units
-
NCE N-Channel Super Trench Power MOSFET NCEP85T16NegotiableMOQ: 3000 Units
-
NCE N-Channel Super Trench Power MOSFET NCEP025F90TNegotiableMOQ: 3000 Units
-
NCE N-Channel Super Trench Power MOSFET NCEP01ND35AGNegotiableMOQ: 3000 Units
-
NCE N-Channel Enhancement Mode Power MOSFET NCE40H29DNegotiableMOQ: 3000 Units
-
NCE N-Channel Super Trench II Power MOSFET NCEP035N85GUNegotiableMOQ: 3000 Units
-
Jerrett MOSFET JR3N100,TO220, TO-247 High VoltageNegotiableMOQ: 3000 Units
-
Jerrett MOSFET JR6N120,TO220, TO-247 High VoltageNegotiableMOQ: 3000 Units
-
Jerrett MOSFET JRP02N06, TO220 Low Internal Resistance, High CurrentNegotiableMOQ: 3000 Units