Home > Products > IC > IRF640NSTRLPBF package TO-263 200V 18A field effect tube 2-3 pole, power tube sub-category
IRF640NSTRLPBF package TO-263 200V 18A field effect tube 2-3 pole, power tube sub-category
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Product Details
| Brand Name | INFINEON | Place of Origin | China | |
| Model Number | IRF640NSTRLPBF |
Product Description
Infineon
encapsulation
TO-26
batch number
24+
quantity
5000
manufacturer
Infineon
Product Category
MOSFET
RoHS
yes
Installation style
SMD/SMT
Package / box
TO-263AB-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - drain-source breakdown voltage
200V
Id-continuous drain current
18A
Rds On - drain-source on-resistance
150 mOhms
Vgs - gate-source voltage
20 V
Qg-gate charge
44.7nC
Minimum operating temperature
-55C
Operating temperature
+175C
Pd-power dissipation
150W
Configuration
Single
channel mode
Enhancement
high
2.3mm
length
6.5mm
Transistor type
1N-Channel
width
6.22mm
Forward transconductance - minimum
6.8 seconds
Fall time
5.5 ns
Rise Time
19ns
Typical shutdown delay time
23ns
Typical switch-on delay time
10ns
Part number alias
SP001561810
unit weight
2 g
place of sale
Nationwide
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