Home > Products > RF power amplifier > 4G FDD LTE1800MHZ (bAND3) Integrated RF Microwave Power Amplifier Electronic Fence System
4G FDD LTE1800MHZ (bAND3) Integrated RF Microwave Power Amplifier Electronic Fence System
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Product Details
| Brand Name | JW | Place of Origin | China | |
| Model Number | JWFLTE1800M-43N1 |
Product Description
Launch section
Operating frequency：1830-1880MHz
Carrier bandwidth：Support FDD-LTE, bandwidth type 5/10/15/20M, working bandwidth 50MHz
Output power：43±1dBm
gain：45±1dB
Gain adjustment range：≥20dB
Gain adjustment step：1dB
In-band fluctuations：≤1.5dB
Input/output VSWR：≤1.5
Second harmonics：≤-45dBc
EVM：Under APD operating conditions, the deterioration of the signal EVM by the amplifier<1%
Out-of-band spurs：≤-36dBm (Amplifier On, No Input, Output Noise Floor Test, RBW=1MHz)
Adjacent channel leakage power ratio：
1. When APD is not turned on, the basic characteristics of the input signal: EVM<8%@QPSK, PAR≤7.5dB
2. ACPR≤-46dBC of adjacent road; ACPR≤-50dBC for the sub-neighboring road
3. Open-loop linear ACPR≤-31dBC (if the APD closed-loop meets the requirements, open-loop linearity is not required)
Operating current：≤3.2A
Receiving section
Operating frequency：1735-1785MHz
gain：45±1dB
Gain adjustment range：≥20dB
Gain adjustment step：1dB
In-band fluctuations：≤1.5dB
Input/output VSWR：≤1.5
Noise figure：≤2.8dB
Operating current：≤500mA
Contact Us
- Shenzhen Jinwen Technology Co., Ltd
- Contact namegongxiawen Chat Now
- Phone86-188-20255933
Product Categories
| RF power amplifier | GNSS antennas |
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