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Help CenterSI7252DP-T1-GE3 Vishay Semiconductors MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Mfr. #:
SI7252DP-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 36.7 A
Rds On - Drain-Source Resistance: 14 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 27 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 46 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI7
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Dual
Fall Time: 7 ns
Forward Transconductance - Min: 40 S
Product Type: MOSFET
Rise Time: 13 ns
factory pack quantity: 3000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 0.017870 oz
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