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Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > 4H-Silicon Carbide Wafer For Semiconductor Industry
4H-Silicon Carbide Wafer For Semiconductor Industry
US$ 50 - 100
MOQ: 10 Pieces
Key Specifications
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Business Type:
Manufacturer
Year Established:
2014
Annual Export Value:
US$1.5 Million - US$2.5 Million
Payment & Shipping
Payment Methods:
Port of Shipment:
Shanghai
Delivery Detail:
2 days
Related Products
we can provide SiC crystal boul, Silicon Carbide (SiC) Wafers and Substrates in different quality grades for researchers and industry manufacturers.
Browse silicon carbide materials below.
Silicon Carbide (SiC) Wafers and Substrates
1. 4H-SiC N-Type Wafer Substrate
Diameter: 4″ up to 6″
Grade: Production, Research, Dummy
Thickness: 350µm or 500µm
Micropipe Density: 0.5/cm² up to 10/cm²
Resistivity: 0.015 – 0.025 ohm.cm
2. 4H-SiC Semi-insulating Substrate
Diameter: 4″ up to 6″
Grade: Production, Research, Dummy
Thickness: 350µm or 500µm
Micropipe Density: 0.5/cm² up to 10/cm²
Resistivity:≥1E8Ω•cm
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Business Type
Manufacturer
Year Established
2014
Annual Export Value
US$1.5 Million - US$2.5 Million
Port of Shipment
Shanghai
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