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SG01M-B18
UVB-only SiC based UV photodiode A = 0.20 mm2
◆ SG01M-B18 UV Photodiode eneral Features
Properties of the SG01M-B18 UV Photodiode
• UVB-only sensitivity, PTB reported high chip stability
• Active Area A = 0.20 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cm2 peak radiation results a current of approx. 2500 nA
About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low,
Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
◆ SG01M-B18 UV Photodiode Specifications
| Parameter | Symbol | Value | Unit |
| Spectral Characteristics | |||
| Typical Responsivity at Peak Wavelength | Smax | 0.125 | AW-1 |
| Wavelength of max. Spectral Responsivity | λmax | 280 | nm |
| Responsivity Range (S=0.1*Smax) | – | 231 … 309 | nm |
| Visible Blindness (Smax/S>405nm) | VB | > 1010 | – |
| General Characteristics (T=25°C) | |||
| Active Area | A | 0.20 | mm2 |
| Dark Current (1V reverse bias) | Id | 0.7 | fA |
| Capacitance | C | 50 | pF |
| Short Circuit (10mW/cm2 at peak) | Io | 2500 | nA |
| Temperature Coefficient | Tc | %/K | |
| Maximum Ratings | |||
| Operating Temperature | Topt | -55 … +170 | °C |
| Storage Temperature | Tstor | -55 … +170 | °C |
| Soldering Temperature (3s) | Tsold | 260 | °C |
| Reverse Voltage | VRmax | 20 | V |
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