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808 nm Laser Diode K81S09F-2.00W

808 nm Laser Diode K81S09F-2.00W photo-1
Negotiable MOQ: 1 Kilogram (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
BWT
Place of Origin:
China
Model Number:
K81S09F-2.00W
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
7 days
Brand Name BWT
Place of Origin China
Model Number K81S09F-2.00W
Delivery Time:4-8weeks
Certification:ISO9001

Key Features 808nm Laser Diode K81S09F-2.00W:

2W output power 105µm, 200µm or 400µm fiber core diameter 0.22NA 808nm wavelength

Applications 808nm Laser Diode K81S09F-2.00W:

Laser pumping Medical use Printing Heating Material processing Marking

Specifications(25℃)

Symbol

Unit

K81S09F-

2.00W

K81S09F-

5.00W

K81S09F-

8.00W

Optical data

CW-output power

Po

W

2

5

8

Center wavelength

lc

nm

808

Tolerance of l

-

nm

±3,±10

Spectral width (FWHM)

△l

nm

<3

Temperature drift of l

-

nm/℃

~0.3

Fiber data(1)

Fiber core diameter

Wc

µm

105, 200

105, 200

105, 200

Numerical aperture

NA

-

0.22

Fiber connector

-

-

FC, ST, SMA-905

Electrical data

Operation current

Iop

A

2.5

6.5

10.0

Threshold current

Ith

A

0.4

0.6

1.5

Conversion efficiency

η

%

35~45

Slope efficiency

ηD

W/A

0.8~1.0

Operation voltage

Vop

V

1.9

2.1

2.2

Reverse voltage

Vre

V

2

PD data

Current

Imo

mA

0.20~1.50

TEC data

Max. current

It

A

4.0

4.0

6.0

Max. voltage

Vt

V

9.8

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Business Type
Trading Company
Total Employees
101 - 200 People
Main Markets
North America, South America, Eastern Europe
Location
Heze, Shandong, China

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