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808 nm Laser Diode K81C-FAC-6.00W

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Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
BWT
Place of Origin:
China
Model Number:
K81C-FAC-6.00W
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BWT Beijing Ltd
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Payment Methods:
Port of Shipment:
China
Delivery Detail:
7 days

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Brand Name BWT
Place of Origin China
Model Number K81C-FAC-6.00W
Delivery Time:4-8weeks
Certification:ISO9001

Key Features 808 nm Laser Diode K81C-FAC-6.00W：

6W output power 808nm wavelength 100µm or 200µm fiber core diameter Chip with FAC(micro-lens for fast axis collimation)

Applications 808 nm Laser Diode K81C-FAC-6.00W：

Solid-state laser pumping Medical/ophthalmic Meterials Processing Graphic Arts Free-space communication

Specifications (25℃)

Symbol

Unit

K81C-FAC

-2.50W

K81C-FAC

-5.00W

K81C-FAC-6.00W

K81C-FAC

-10.00W

Optical data

CW-output power

Po

W

2.5

5

6

10

Center wavelength (1)

lc

nm

808

Tolerance of l

-

nm

±3, ±10

Spectral width (FWHM)

△l

nm

<3

Temperature drift of l

-

nm/℃

~0.3

Emitting area

Dimensions

W×H

µm

150×1

200×1

200×1

400×1

FWHM

beam divergence

Parallel to junction

θ∥

degree

10

Perpendicular to junction

θ⊥

degree

<40，<10，<2

Electrical data

Operation current

Iop

A

2.5

5.3

6.5

10.0

Threshold current

Ith

A

0.4

0.6

0.6

1.5

Conversion efficiency(1)

η

%

40~55

Slope efficiency(2)

ηD

W/A

0.8~1.2

Operation voltage

Vop

V

1.8

2.1

2.1

2.2

Reverse voltage

Vre

V

2

Other specifications

Operation temperature

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BWT Beijing Ltd
Business Type
Trading Company
Total Employees
101 - 200 People
Main Markets
North America, South America, Eastern Europe
Location
Heze, Shandong, China
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