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Specifications
SILICON BIDIRECTIONAL DIACS DB31,Glass passivated
2,PC:150mW,VBO : 36V, ITRM:2.0A, DO-35
3,LOW BREAK OVER CURRENT
SILICON BIDIRECTIONAL DIACS DB3
POWER DISSIPATION 150 mW
1)Part Number: DB3
2)Package: DO-41,molded glass
3)PC: 150mW
4)ITRM: 2A
5)VBO: 28-36V
6)IBO: 100uA
FEATURES
·The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors.
·They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,
·The breakover symmetry is within three volts (DB3,DB34,DB4) or our volts(DB5,DB6).
·These diacs are intended for use in thyrisitors phase control ,circuits for lamp dimming, universal motor speed
control ,and heat control.°C
MECHANICAL DATA
··Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Color band denotes cathode end
·Mounting position: Any
·Weight: 0.33 grams
DESCRIPTION
High reliability glass passivation insuring parameter stability and protection against junction contamination.
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