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Home > Electrical & Electronics > Electronic Tube & Transistor > Rectifier Diode > KBP206 Kbp Bridge Diode

KBP206 Kbp Bridge Diode

Name: KBP206 Kbp Bridge Diode
Brand: BX,PY
SKU: 134126265
Availability: InStock

Negotiable MOQ: 1000 Pieces (Price negotiable depending on order volume and customization)

Key Specifications

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Place of Origin:

Chongqing, China

Brand Name:

BX,PY

Model Number:

Silicon Bridge Rectifiers

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Shenzhen Bingxu Technology Co., Ltd.

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Port of Shipment:

Shenzhen

Delivery Detail:

Delivery time depends on order quantity.

Product Details
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Place of Origin Chongqing, China

Brand Name BX,PY

Model Number Silicon Bridge Rectifiers

Type Rectifier Diode

Package Type Through Hole

Max. Forward Voltage .

Max. Reverse Voltage 600V

Max. Forward Current 2.0A

Max. Reverse Current .

Specifications

KBP206 Bridge Diode
1,2A, 600V
2,Low reverse current
3,Low forward voltage drop
4,High reliability

SILICON BRIDGE RECTIFIERS DIODE KBP201 THRU KBP207
PRV : 50 - 1000 Volts
Io : 2.0 Amperes

FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board

MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 2.74 grams

Type Number	SYM BOL	KBP 201	KBP 202	KBP 203	KBP 204	KBP 205	KBP 206	KBP 207	units
Maximum Recurrent Peak Reverse Voltage	*V_RRM*	50	100	200	400	600	800	1000	V
Maximum RMS Voltage	*V_RMS*	35	70	140	280	420	560	700	V
Maximum DC blocking Voltage	*V_DC*	50	100	200	400	600	800	1000	V
Maximum Average Forward rectified Output Current at TA=50°C	*I_F(AV)*	2.0							A
Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method)	*I_FSM*	60							A
Maximum Forward Voltage Drop per element at 2.0A DC	*V_F*	1.0							V
Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =100°C	*I_R*	10.0 500.0							uA uA
I²t Rating for Fusing (t 8.3ms)	*I²t*	10							A²Sec
Typical Junction Capacitance (Note 1)	*C_J*	15							pF
Typical Thermal Resistance (Note 2)	*R_(JA)*	25							°C /W
Storage Temperature	*T_STG*	-55 to +150							°C
Operating Junction Temperature	*T_J*	-55 to +125							°C