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MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551

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US$ 0.001 - 0.002 MOQ: 1 Piece
Key Specifications
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Model Number:
MMBD914 DNA30EM2200PZ 1N5818
Brand Name:
original
Place of Origin:
American Samoa
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DGT Technology (SZ) Co., Limited
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
Delivery time depends on order quantity.

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Model Number MMBD914 DNA30EM2200PZ 1N5818
Brand Name original
Place of Origin American Samoa
MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551
 
Product description
 

Are you looking for below parts ?

     Welcome to contact us for current price !

MMBD914
DIODE GEN PURP 100V 200MA SOT23

Packaging

Tape & Reel (TR)

Series

-

Diode Configuration

0

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

200mA

Current - Average Rectified (Io) (per Diode)

0

Voltage - Forward (Vf) (Max) @ If

1V @ 10mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

5µA @ 75V

Capacitance @ Vr, F

4pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

Operating Temperature - Junction

150°C (Max)
DNA30EM2200PZ
DIODE GEN PURP 2.2KV 30A TO263

Packaging

Tape & Reel (TR)

Series

-

Diode Configuration

0

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

2200V (2.2kV)

Current - Average Rectified (Io)

30A

Current - Average Rectified (Io) (per Diode)

0

Voltage - Forward (Vf) (Max) @ If

1.26V @ 30A

Speed

Standard Recovery >500ns,>200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

40µA @ 2200V

Capacitance @ Vr, F

7pF @ 700V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (D2Pak)

Operating Temperature - Junction

-55°C ~ 150°C
 
1N5818
DIODE SCHOTTKY 30V 1A DO41

Packaging

Tape & Reel (TR)

Series

-

Diode Configuration

0

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io)

1A

Current - Average Rectified (Io) (per Diode)

0

Voltage - Forward (Vf) (Max) @ If

550mV @ 1A

Speed

Fast Recovery =< 500ns,>200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

500µA @ 30V

Capacitance @ Vr, F

110pF @ 4V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AL, DO-41, Axial

Supplier Device Package

DO-41

Operating Temperature - Junction

-65°C ~ 125°C
BAT 64 E6327
DIODE SCHOTTKY 40V 120MA SOT23-3

Packaging

Tape & Reel (TR)

Series

-

Diode Configuration

0

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

120mA

Current - Average Rectified (Io) (per Diode)

0

Voltage - Forward (Vf) (Max) @ If

750mV @ 100mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

5ns

Current - Reverse Leakage @ Vr

2µA @ 30V

Capacitance @ Vr, F

6pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

PG-SOT23-3

Operating Temperature - Junction

150°C (Max)
 
BAX16TR
DIODE GEN PURP 150V 200MA DO35

Packaging

Tape & Reel (TR)

Series

-

Diode Configuration

0

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

200mA

Current - Average Rectified (Io) (per Diode)

0

Voltage - Forward (Vf) (Max) @ If

650mV @ 1mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

100nA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

175°C (Max)
JAN1N5551
DIODE GEN PURP 400V 3A AXIAL

Packaging

Bulk

Series

Military, MIL-PRF-19500/420

Diode Configuration

0

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

3A

Current - Average Rectified (Io) (per Diode)

0

Voltage - Forward (Vf) (Max) @ If

1.2V @ 9A

Speed

Standard Recovery >500ns,>200mA (Io)

Reverse Recovery Time (trr)

2µs

Current - Reverse Leakage @ Vr

1µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

B, Axial

Supplier Device Package

*

Operating Temperature - Junction

-65°C ~ 175°C
 
 
Packing & shipping
 
 

  MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551


 
 
 
Our Services
 

Quality Warranty:   1. All parts send have checked before shipment.

                                     2. We offer quality assurance for 30-360days.

                                     3. The parts only new and original.

 

Payment Mothods :  1. Bank wire transfer

                                2. Alipay     

                                3. Western Union

                                4. Escrow 

                                5.Paypal  

 

 
Contact us
 
 

DGT Ltd as a professional Electronic wholesaler for one-stop service of electronic components. Competitive price advantage help to save your purchase cost and your precious time.

MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551

Contact way:

    MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551      Skype: jack-dgttech                

  MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551      QQ: 2824823713        

    MMBD914 DNA30EM2200PZ 1N5818 BAT 64 E6327 BAX16TR JAN1N5551       ICQ: 612712522

       

 
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DGT Technology (SZ) Co., Limited
Business Type
Manufacturer, Trading Company, Distributor/Wholesaler
Year Established
2015
Factory Size
Below 1,000 square meters
Total Employees
11 - 50 People
Contact Supplier Request Quote Chat Now

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