Silicon Carbide (SiC) Wafers and Substrates 1. 4H-SiC N-Type Wafer Substrate Diameter: 4″ up to 6″ Grade: Production, Research, Dummy Thickness: 350µm or 500µm Micropipe Density: 0.5/cm² up to 10/cm² Resistivity: 0.015 – 0.025 ohm.cm 2. 4H-SiC Semi

Silicon Carbide(SiC) has become a promising material in semi-conductor industry, due to the development of SiC material manufacturing and the decrease of the cost in recent years.

Silicon Carbide (SiC) is a wide bandgap material and is the typical representative of the third-generation semiconductor materials. Due to the wide bandgap, high thermal conductivity, high saturated carrier mobility, high threshold breakdown electric field strength, and high chemical stability, it is an ideal substrate for the fabrication of power electronics and radio frequency devices operating at extreme environments, such as high temperature, high frequency, high power, and strong radiation. Therefore, SiC has extensive applications in white-light illumination, automobile electronic, radar communication, aeronautic and aerospace, and nuclear radiation.

We have the ability to make processing, like cutting, drilling, dicing, polishing, etc. We have rich experiences on the micro-machining on the hard but brittle materials.