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High Bright 3mm Round 760nm Near Infrared DIP LED

High Bright 3mm Round 760nm Near Infrared DIP LED photo-1
US$ 0.8 - 0.9 MOQ: 1000 Pieces
Key Specifications
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Brand Name:
jinweiguang
Place of Origin:
China
Model Number:
5RGBW02-9HWB-WR008
Payment & Shipping
Payment Methods:
Port of Shipment:
Jiangmen
Delivery Detail:
7 days
Brand Name jinweiguang
Place of Origin China
Model Number 5RGBW02-9HWB-WR008

Features

(1). 3.0*5.3mm ELLIPSE LAMP

(2).LOWCURRENT REQUIREMENT

(3).LOWPOWER CONSUMPTION

(4).VERSATILE MOUNTING ON P.C. BOARD PANEL

(5).LONG LIFE-SOLID STATE RELIABILITY



Part No.

Chip Material


Emitting Color


Lens Type


3W4C14-RD302/4.2

GaAs/ GaAs

The near infrared

Water Clear

 

 

3Electrical / Optical Characteristics at TA=25

Parameter

Symbol


Min.


Typ.


Max.


Units


TestConditions


Forward Voltage

VF

--

1.5

1.65

V

IF=20mA

Peak Emitting Wavelength

λp

--

765

700

nm

IF=20mA

Spectral Line Half Width

λp

--

33

--

nm

IF=20mA

Reverse Current

IR

--

--

10

uA

VR=5V

Axial Radiant Intensity

IE

--

25

35

mW/sr

IF=20mA

Tenninal Capacitance

Ct

--

20

--

pF

F=1MHZ

Half Intensity Angle

2θ1/2

--

30

--

deg

IF=20mA

 

Note:

θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical

centerline value.

 

 

4Absolute Maximum Ratings at TA=25

Parameter

Symbo

Maximum Rating

Units

Power dissipation

PD

100

mW

Aerage Forward Current

IF

30

mA

Peak Forward Current(Duty=0.1,1KHZ)  


IFp (Peak)

1

A

Reverse Voltage

VR

5 V


Operating Temperature Range

Topr

-20 To +65

Storage Temperature Range

Tstg

-40 To +80

Lead Solder Temperature(2)

Tsol

260 for 3 seconds

 

Note:

(1).1/10 Duty Cycle, 0.1ms Pulse Width.

(2).The production accord with the demand of ROHS.


Product Tags: 760nm Infrared LED Diode , IR DIP/ Through-Hole , IR Emitter for Infrared visual instrument

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Business Type
Manufacturer
Year Established
1996
Annual Export Value
US$2.5 Million - US$5 Million
Port of Shipment
Jiangmen, Guangzhou, Shenzhen

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