High Bright 3mm Round 760nm Near Infrared DIP LED
Features
(1). 3.0*5.3mm ELLIPSE LAMP
(2).LOWCURRENT REQUIREMENT
(3).LOWPOWER CONSUMPTION
(4).VERSATILE MOUNTING ON P.C. BOARD PANEL
(5).LONG LIFE-SOLID STATE RELIABILITY
Part No. |
Chip Material |
Emitting Color |
Lens Type |
3W4C14-RD302/4.2 |
GaAs/ GaAs |
The near infrared |
Water Clear |
3、Electrical / Optical Characteristics at TA=25℃
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Units |
TestConditions |
Forward Voltage |
VF |
-- |
1.5 |
1.65 |
V |
IF=20mA |
Peak Emitting Wavelength |
λp |
-- |
765 |
700 |
nm |
IF=20mA |
Spectral Line Half Width |
⊿λp |
-- |
33 |
-- |
nm |
IF=20mA |
Reverse Current |
IR |
-- |
-- |
10 |
uA |
VR=5V |
Axial Radiant Intensity |
IE |
-- |
25 |
35 |
mW/sr |
IF=20mA |
Tenninal Capacitance |
Ct |
-- |
20 |
-- |
pF |
F=1MHZ |
Half Intensity Angle |
2θ1/2 |
-- |
30 |
-- |
deg |
IF=20mA |
Note:
θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical
centerline value.
4、Absolute Maximum Ratings at TA=25℃
Parameter |
Symbo |
Maximum Rating |
Units |
Power dissipation |
PD |
100 |
mW |
Aerage Forward Current |
IF |
30 |
mA |
|
Peak Forward Current(Duty=0.1,1KHZ) |
IFp (Peak) |
1 |
A |
Reverse Voltage |
VR |
5 V |
|
Operating Temperature Range |
Topr |
-20℃ To +65℃ |
|
Storage Temperature Range |
Tstg |
-40℃ To +80℃ |
|
Lead Solder Temperature(2) |
Tsol |
260℃ for 3 seconds |
|
Note:
(1).1/10 Duty Cycle, 0.1ms Pulse Width.
(2).The production accord with the demand of ROHS.
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