Home > Electrical & Electronics > Integrated Circuit > General-purpose Integrated Circuit > QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm

QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm

QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm photo-1
QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm photo-2
QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm photo-3
QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm photo-4
QPA2628D Amplifier From Qorvo Amplifier, LNA, 25-31 GHz, 22 DB, 19 DBm, DIE, GaAs, 2.4 x 1.0 mm photo-5
US$ 500 - 1000 MOQ: 100 Pieces
Key Specifications
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Brand Name:
QORVO
Place of Origin:
United States
Model Number:
QPA2628D
Payment & Shipping
Payment Methods:
Port of Shipment:
hongkong
Delivery Detail:
10 days
Brand Name QORVO
Place of Origin United States
Model Number QPA2628D
Type Other, Power Amplifier
Package FL
D/C 16+

 QPA2628D Amplifier from Qorvo Amplifier, LNA, 25-31 GHz, 22 dB, 19 dBm, DIE, GaAs, 2.4 x 1.0 mm

The Qorvo QPA2628D is a high-performance, low noise amplifier fabricated on Qorvo's production 90nm pHEMT (QPHT09) process. Covering 25–31 GHz, the QPA2628D provides 22 dB small signal gain and P1dB of 19 dBm, while supporting a noise figure of 1.7 dB and IM3 levels of -53 dBc (at Pout=0 dBm/tone).

The QPD2628D is in die form, 2.40 x 1.00 x 0.10 mm, with both RF ports matched to 50 ohms and with integrated DC blocking caps on both I/O ports for simple system integration.

The QPA2628D high performance makes it ideal for satellite and point to point communication systems.

Lead-free and RoHS compliant.

Evaluation boards are available upon request.

QPA1011D 


Amplifier from Qorvo
Amplifier, Power, 7.9 to 11 GHz, 26 dB, 25 W, GaN

The Qorvo QPA1011 is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1011 operates from 7.9 – 11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37.5% and large-signal gain of 19.5 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.

QPA1011 can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.

The QPA1011 is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite communication and data links, as well as, military and commercial radar systems.

Lead-free and RoHS compliant.


CMPA801B025F Description 35 W, GaN Power Amplifier from 5.5 to 8.5 GHz

In May 2015, Cree announced that they will spin-off their Power & RF Division. This division is now called Wolfspeed. Wolfspeed is leading the innovation and commercialization of next-generation power and wireless systems based on silicon carbide and gallium nitride.

The CMPA5585025F from CREE is a GaN HEMT based power amplifier which operates between 5.5 and 8.5 GHz. It is ideal for point to point radio, communication and SATCOM applications. It provides 35 W of typical saturated power with a small signal gain of 24 dB and 30% of power added efficiency. The CMPA5585025F has a high breakdown voltage, higher thermal conductivity and requires up to 28V. It is available in a 10 lead metal/ceramic flanged package which measures 1.00 x 0.385 inches.

Manufacturer Wolfspeed

Description 35 W, GaN Power Amplifier from 5.5 to 8.5 GHz

Type Power Amplifier, GaN Amplifier

Configuration IC / MMIC

Application  Commercial, SATCOM, Point-to-Point, Radar, Radio System

Frequency 5.5 to 8.5 GHz

Gain 17.5 to 24 dB

Power Gain 16 dB

Small Signal Gain 17.5 to 24 dB

Saturated Power 35 W

PAE 35% to 37%

Impedance 50 Ohms

VSWR 5.00:1

Input VSWR 5.00:1

Output VSWR 5.00:1

Input Return Loss -6 to -3.5 dB

Output Return Loss  -6 to -2.9 dBm

Package Type Ceramic

HMC5929LS6

 

The HMC5929LS6 is a 4 stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 40 and 43.5 GHz. It provides 19 dB of gain, +30 dBm of saturated output power, and 15% PAE from a +6V supply. The amplifier has an IP3 of +36 dBm and is ideal for high linearity applications in military and space as well as point-to-point and point-to-multi-point radios. It is available in a ceramic air cavity package which exhibits low thermal resistance and is compatible with surface mount manufacturing techniques. The RF I/Os are internally matched and DC blocked for ease of integration into higher level assemblies.

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Product Tags: Power Amplifier , CMPA801B025F , QPA2628D

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Business Type
Trading Company
Year Established
2012
Overseas Office
Yes
Factory Size
Below 1,000 square meters

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