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●LHDS1GA high temperature memory is NAND type general memory with high reliability, good performance and fast writing and reading under severe environment of －45℃～175℃.
● Working temperature scope:﹣45℃ ～ ﹢175℃
Power supply voltage Vcc(V): 2.7 V ～ 3.6 V
Input high level(V): 0.8Vcc ～ Vcc+0.3
Input low level(V): - 0.3 ～ 0.2Vcc
Output high level(V):2.4 ～ Vcc
Output low level(V):-0.3 ～ 0.4
Encapsulation: 16 PIN DIP (15.5 x 21.6 /2.54 mm space)
●The 1GB memory module includes 4,096 blocks, each block contains 128 pages and each page includes 2112 bytes(2K+64). The programming and reading operation all base on page as units and erase operation bases on block as unit as well.
The address bus of LHDS1GA reuses 8 I/O interfaces. Physical space needs 30 addresses, thus five cycles are needed for addressing : two for column address to address specific of each ;3 cycles are used for row address to address the specific page of block. Page write and progress need five same address cycles and execute after inputting the required commands . In erase operation of block, only three row addresses are used. The operation of device is selected by writing commands into writing register.
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