ALL CATEGORIES

Home > Electrical & Electronics > Passive Components > Resistor & Potentiometer > 808nm Laser Diode K81S06F-2.00W

808nm Laser Diode K81S06F-2.00W

Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)

Key Specifications

Brand Name:

BWT

Place of Origin:

China

Model Number:

K81S06F-2.00W

BWT Beijing Ltd

Payment & Shipping

Payment Methods:

Port of Shipment:

China

Delivery Detail:

7 days

Brand Name BWT

Place of Origin China

Model Number K81S06F-2.00W

Delivery Time:4-8weeks
Certification:ISO9001

Key Features 808nm Laser Diode K81S06F-2.00W：

2W output power 105µm or 200µm fiber core diameter 0.22NA 808nm wavelength

Applications 808nm Laser Diode K81S06F-2.00W：

Laser pumping Medical use Printing Heating Material processing Marking

pecifications（25℃）		Symbol	Unit	K81S06F-2.00W	K81S06F-5.00W
Optical data	CW-output power	Po	W	2	5
	Center wavelength	lc	nm	808
	Tolerance of l	-	nm	±3,±10
	Spectral width (FWHM)	△l	nm	<3
	Temperature drift of l	-	nm/℃	~0.3
Fiber data(1)	Fiber core diameter	Wc	µm	105, 200
	Numerical aperture	NA	-	0.22
	Fiber connector	-	-	FC, ST, SMA-905
Electrical data	Operation current	Iop	A	2.5	6.0
	Threshold current	Ith	A	0.4	0.7
	Conversion efficiency	η	%	30~40
	Slope efficiency	ηD	W/A	0.7~1.0
	Operation voltage	Vop	V	1.9	2.1
	Reverse voltage	Vre	V	2
PD data	Current	Imo	mA	0.2~1.0
Others	Operation temperature	Top	℃	10~30
	Storage temperature	Tst	℃	-20~+80
	Expected lifetime	MTBF	h	>10,000
	Dimensions (fiber and connector not included)	-	mm	26.0×12.7×12.5