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Home > Electrical & Electronics > Integrated Circuit > General-purpose Integrated Circuit > HHL Packaged 8W High Power Diode Laser Module 808nm 400m 0.22N.A.

HHL Packaged 8W High Power Diode Laser Module 808nm 400m 0.22N.A.

Diode Laser Module Online Market

Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)

Key Specifications

Brand Name:

BWT

Place of Origin:

China

Model Number:

K808D09FN-8.00W

Payment & Shipping

Payment Methods:

Port of Shipment:

China

Delivery Detail:

7 days

Brand Name BWT

Place of Origin China

Model Number K808D09FN-8.00W

Delivery Time:4-8weeks
Certification:ISO9001

808nm 8W High Power 400µm 0.22N.A. HHL Packaged Diode Laser Module K808D/K09F-8.00W.

Features:

wavelength 808nm output power 4W, 8W 105µm, 200µm and 400µm fiber core diameter 0.22N.A.

Applications:

Laser pumping Medical useMaterial processing

Specifications(25℃)	Symbol	Unit	K808D09FN-4.00W	K808D09FN-8.00W
Optical Data	CW-Output Power	Po	W	4	8
Center Wavelength	λc	nm	808
Tolerance of λ	-	nm	±3, ±10
Spectral Width (FWHM)	△λ	nm	<3
Temperature Drift of λ	-	nm/℃	~0.3
Fiber Data(1)	Fiber Core Diameter	Wc	µm	105, 200	200, 400
Numerical Aperture	N.A.	-	0.22
Fiber Connector	-	-	SMA-905
Electrical Data	Operating Current	Iop	A	5.0	10.0
Threshold Current	Ith	A	0.8	1.5
Conversion Efficiency	η	%	35~45
Slope Efficiency	ηD	W/A	0.8~1.0
Operating Voltage	Vop	V	1.9	2.2
Reverse Voltage	Vre	V	2
PD Data	Current	Imo	mA	0.20~1.50
TEC Data	Max. Current	It	A	4.0	6.0
Max. Voltage	Vt	V	9.8
Thermistor Data(2)	Thermistor	Rt	(K Ω)/β(25℃)	10±5%/3477
Others	Operating Temperature	Top	℃	10~30
Storage Temperature	Tst	℃	-20~80
Expected Lifetime	MTTF	h	>10, 000
Dimensions (fiber and connector not included)	-	mm	~44.5×31.8×18.0
Lead Soldering Temperature	Tis	℃	260(10 sec.)