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Negotiable
MOQ: 1 Piece (Price negotiable depending on order volume and customization)
Key Specifications
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Business Type:
Trading Company
Year Established:
1998
Total Employees:
101 - 200 People
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
7 days
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Description:Alingap led dice Part no aoc-214rx3m series rev 1.4 Features red color emission excellent performance & high efficiency great reliability even in harsh environment mirror reflector to increase efficiency Description Aoc-214rxm series is a red color emitting alingap led grown by mocvd technique. Its structure enables enhanced quantum efficiency; the mirror reflector greatly increases the light extraction efficiency and therefore a greater light intensity. This device is designed for use in high ambient light condition. Chip dimensions Chip size:13mil*13mil(+or-)1.0mil Emitting area:12mil*12mil(+or-)0.5mil Bonding pad: 3.8mil(+or-)0.5mil Chip thickness:7mil(+or-)0.5mil 1. Cathode 2. N-cladding 3. Cart mqw* 4. P-cladding 5. Transparent layer 6. Reflective layer 7. Substrate 8. Anode * cart mqw is charge asymmetric resonance tunneling multiple quantum well 1. Cathode 2. N-cladding 3. Cart mqw* 4. P-cladding 5. Transparent layer 6. Reflective layer 7. Substrate 8. Anode Electrical/optics specification: Measuring item____symbol__condition__min__typ. __max__unit Forward voltage_____vf____if=20ma____1.8___-____2.3___v Reverse voltage_____vr____ir=10ua_____9____-_____-____v Dominant wavelength__d____if=20ma____615___-____645___nm Max. Junction temp. _tmax_____-________-____-____120___degrees centigrade
Product Origin:
Brand Name:
Price Terms:
Payment Terms:
Certification:
Description:Alingap led dice Part no aoc-214rx3m series rev 1.4 Features red color emission excellent performance & high efficiency great reliability even in harsh environment mirror reflector to increase efficiency Description Aoc-214rxm series is a red color emitting alingap led grown by mocvd technique. Its structure enables enhanced quantum efficiency; the mirror reflector greatly increases the light extraction efficiency and therefore a greater light intensity. This device is designed for use in high ambient light condition. Chip dimensions Chip size:13mil*13mil(+or-)1.0mil Emitting area:12mil*12mil(+or-)0.5mil Bonding pad: 3.8mil(+or-)0.5mil Chip thickness:7mil(+or-)0.5mil 1. Cathode 2. N-cladding 3. Cart mqw* 4. P-cladding 5. Transparent layer 6. Reflective layer 7. Substrate 8. Anode * cart mqw is charge asymmetric resonance tunneling multiple quantum well 1. Cathode 2. N-cladding 3. Cart mqw* 4. P-cladding 5. Transparent layer 6. Reflective layer 7. Substrate 8. Anode Electrical/optics specification: Measuring item____symbol__condition__min__typ. __max__unit Forward voltage_____vf____if=20ma____1.8___-____2.3___v Reverse voltage_____vr____ir=10ua_____9____-_____-____v Dominant wavelength__d____if=20ma____615___-____645___nm Max. Junction temp. _tmax_____-________-____-____120___degrees centigrade
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Business Type
Trading Company
Year Established
1998
Total Employees
101 - 200 People
Main Markets
North America, South America, Eastern Europe
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