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Sell Alingap Led Dice
Negotiable
MOQ: 1 Piece (Price negotiable depending on order volume and customization)
Key Specifications
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Business Type:
Trading Company
Year Established:
1998
Total Employees:
101 - 200 People
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
7 days
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Description:Alingap led dice Part no.: Aoc-112glc-au (preliminary specification rev 0.1) Features Green color emission excellent performance at economical price high efficiency even in low current application Description Aoc-112glc is a yellow green color emitting alingap led grown by mocvd technique. Its structure enables enhanced quantum efficiency and therefore a greater light intensity. This device is designed to suit the growing demand in the compact size electronic goods. Chip dimensions Chip size:12 mil x 12 mil (300um x 300um) Emitting area:11mil x 11mil(275um x 275um) Bonding pad:4.0 mil (100um) Chip thickness:6.5 mil (165um) Tolerance (+-) 1 mil (25um) 1. Anode 2. Gap window layer 3. Alingap cladding 4. Alingap cart mqw* 5. Lower cladding 6. Dbr layer 7. Backside metallization Specification: Measuring item______symbol__condition___min___typ___max___unit Forward voltage______vf______if=20ma____1.7____-____2.2____v Reverse voltage______vr______ir=10ua_____9_____-_____-_____v Dominant wavelength__d_______if=20ma____555____-____562____nm Grades reference: Grade___minimum intensity(@20ma)___grade___minimum intensity(@20ma) X3____________iv>=15 mcd_____________b_______iv>=30 mcd A_____________iv>=20 mcd Note: 1. All measurements are done with aoc's standard testing equipment 2. Luminance intensity is measured on bare chip
Product Origin:
Brand Name:
Price Terms:
Payment Terms:
Certification:
Description:Alingap led dice Part no.: Aoc-112glc-au (preliminary specification rev 0.1) Features Green color emission excellent performance at economical price high efficiency even in low current application Description Aoc-112glc is a yellow green color emitting alingap led grown by mocvd technique. Its structure enables enhanced quantum efficiency and therefore a greater light intensity. This device is designed to suit the growing demand in the compact size electronic goods. Chip dimensions Chip size:12 mil x 12 mil (300um x 300um) Emitting area:11mil x 11mil(275um x 275um) Bonding pad:4.0 mil (100um) Chip thickness:6.5 mil (165um) Tolerance (+-) 1 mil (25um) 1. Anode 2. Gap window layer 3. Alingap cladding 4. Alingap cart mqw* 5. Lower cladding 6. Dbr layer 7. Backside metallization Specification: Measuring item______symbol__condition___min___typ___max___unit Forward voltage______vf______if=20ma____1.7____-____2.2____v Reverse voltage______vr______ir=10ua_____9_____-_____-_____v Dominant wavelength__d_______if=20ma____555____-____562____nm Grades reference: Grade___minimum intensity(@20ma)___grade___minimum intensity(@20ma) X3____________iv>=15 mcd_____________b_______iv>=30 mcd A_____________iv>=20 mcd Note: 1. All measurements are done with aoc's standard testing equipment 2. Luminance intensity is measured on bare chip
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Business Type
Trading Company
Year Established
1998
Total Employees
101 - 200 People
Main Markets
North America, South America, Eastern Europe
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