SI4532ADY-T1-E3
Specifications
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Manufacturer: Vishay
Product Category: MOSFET Power
RoHS: Details
Configuration: Dual Dual Drain
Transistor Polarity: N and P-Channel
Resistance Drain-Source RDS (on): 0.053 Ohms
Drain-Source Breakdown Voltage: +/- 30 V
Gate-Source Breakdown Voltage: +/- 20 V
Continuous Drain Current: 4.9 A, - 3.9 A
Power Dissipation: 2 W
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOIC-8 Narrow
Packaging: Reel
Fall Time: 8 ns, 10 ns
Minimum Operating Temperature: - 55 C
Rise Time: 10 ns, 9 ns
Standard Pack Qty: 2500
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