Silicon Target 5N Sputtering B-doped
Silicon Target 5N
Purity: Si 99.99% min. ,Si 99.99% min., Si 99.9999% max.
Resistivity: 0.005-0.2 ohm-cm , 0.1-100ohm-cm
Dimension:
Length:300mm max.
Width:140mm max.
Thickness:3-12mm
Diameter:280mm max.
Type: monocrystalline and polycrytalline silicon target with Boron or Phosphorus doped.
Shape: different shapes can be made as per your drawing.
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