Silicon IGBT Chip, IGBT Wafer, IGBT diode

Specifications

Die Size : 2~ 40 mil
Ic(A) : 15 ~ 30 A
Vth : 2.0 ~ 2.5
Vdss : ~ 1200 V
Rds(ohm/om) : 3.5 ~ 7

IGBT Chip/Wafer

 

Size	6"
Die Size	2~ 40 mil
Ic(A)	15 ~ 30 A
Vth	2.0 ~ 2.5
Vdss	~ 1200V
Rds(ohm/om)	3.5~ 7

 

Some of Our Reference Customer :

Microsemi , Vishay, Semicoa, Amonix, Avago, MaCom, Quicksil, Powerex, Advanced Power Technology, Solid State Device Inc, Semtech, OSI, UDT, Teccor, Infenion, Fargo, Semikron, Silicon Power, DRS, Dynex Semi, Proton-Electronics, Lite-on, Taiwan Semiconductor, Pan Jit, Rectron, Tyntek, Optotech, Epitek, NTT...etc. and also has some China Military and Aerospace customers

 

 

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