Semiconductor Silicon Epitaxial Wafer
Specifications
Silicon EPI Wafer1 Diameter (mm) 76.2 ~ 200
2 Epi-Layer Thickness: 0.1 ~ 125
Siliocn EPI Wafer
| Diameter (mm) | 76.2 ~ 200 |
| Type / Dopant | N: Phosphorus |
| P: Boron | |
| Gas | PH3B2H6AsH3 |
| Resistivity (Ω.cm) | N: 2 × 10-3 ~ 1,250 |
| |
| Epi-Layer Thickness (μm) | 0.1 ~ 125 |
* Multi layers are available * Other customized specifications are welcome | |
Here are few of our reference customers:
ABB, Powerex, OSI, Dynex, Infenion, Semtech, UDT, Fargo, Semikron, Microsemi, Vishay, TFT, Semicoa, Amonix, Avago, MaCom, Quicksil, APT, Solid State Device Inc, Silicon Power, DRS, Proton, Lite-on, Taiwan Semi, Pan Jit, Rectron,Tyntek, Optotech, Epitek, NTT...etc. and also has some China Military and Aerospace customers.
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