Gallium Arsenide GaAs Wafer for LED

Specifications

Gallium Arsenide GaAs Wafer for LED
Growth Method LEC/VB/VGF
1. for LED
2. for Solar CPV Cell
3. for Wireless

Gallium Arsenide GaAs Wafer for LED

 

Growth Method	LEC		VB , VGF
Diameter	3"	4"	2"	3"	4"
Type	N Type		N Type
Dopant	Si / Te		Si / Te
Carrier Concentration	(5~40)*1017		(5~40)*1017
Mobility	1500(Si)/2500(Te)		1500(Si)/2500(Te)
Dislocation Density	2.0*104	5.0*104	5.0*103	1.0*104	1.0*104
Thinkness	350 ± 25	450 ± 25	275 ± 25	350 ± 25	450 ± 15
Crystal Orientation	(100)→(111) A15 ± 0.5		(100)→(111) A15 ± 0.5
Major Flat Length	22 ± 1	32 ± 1	16 ± 1	22 ± 1	32 ± 1
Second Flat Length	11 ± 1	18 ± 1	7 ± 1	11 ± 1	18 ± 1
TTV	10	15	7	10	15
Warp	15	15	10	15	15
Particle	20	50	10	20	50
Surface	P/E , P/P	P/E , P/P	P/E	P/E , P/P

 

Here is few of our reference customers:

Tyntek, Optotech, Epitek, NTT,EPISTAR,Arima,Ubilux,OSI,

ABB, Powerex, Dynex, Infenion, Semtech, UDT, Fargo, Semikron, Microsemi, Vishay, TFT, Semicoa, Amonix, Avago, MaCom, Quicksil, APT, Solid State Device Inc, Silicon Power, DRS, Proton, Lite-on, Taiwan Semi, Pan Jit, Rectron,...etc. and also has some China Military and Aerospace customers.