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Home > Electrical & Electronics > Electronic Tube & Transistor > Rectifier Diode > 2inch 3inch 4inch Indium Phosphide InP Wafer for LD Laser Diode
2inch 3inch 4inch Indium Phosphide InP Wafer for LD Laser Diode
Negotiable
MOQ: 25 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Place of Origin:
Taiwan, China
Brand Name:
Atecom
Model Number:
Customization
Payment & Shipping
Payment Methods:
Port of Shipment:
Taipei
Delivery Detail:
Delivery time depends on order quantity.
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Place of Origin
Taiwan, China
Brand Name
Atecom
Model Number
Customization
Type
Laser Diode
Package Type
Other
2inch 3inch 4inch Indium phosphide InP Wafer for LD Laser Diode
Growth |
LEC |
|
|||
Type / Dopant |
N/S |
SI/Fe |
|
||
Diameter |
50.8 ± 0.5 |
76.2 ± 0.5 |
50.8 ± 0.5 |
76.2 ± 0.5 |
mm |
Thickness |
450 ± 25 |
625 ± 25 |
µm |
||
Resistivity |
(1-10) X 10-3 |
Not Specified |
Ohm.cm |
||
Orientation |
(100) ± 0.5 |
degree |
|||
Primary Orientation |
(0-1-1) |
(0-1-1) |
degree |
||
Length |
16 ± 1 |
22 ± 1 |
16 ± 1 |
22 ± 1 |
mm |
Secondary Orientation |
(0-11) |
(0-11) |
degree |
||
Length |
7 ± 1 |
11 ± 1 |
11 ± 1 |
11 ± 1 |
mm |
Mobility |
> 1000 |
Not Specified |
cm2/V.S |
||
Carrier Concentration |
(1-10) X 1018 |
Semi Insulating |
atm/cm-3 |
||
Etch Pit Density |
< 2500 |
Not Specified |
ea/cm-2 |
||
Front Side Surface |
Polished in Epi-ready |
|
|||
Back Side Surface |
Etched |
|
|||
*Customize
Send Inquiry to This Supplier
Business Type
Manufacturer, Trading Company, Agent
Year Established
1998
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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