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High Power Silicon Controlled Thyristor 1600V

High Power Silicon Controlled Thyristor 1600V photo-1
High Power Silicon Controlled Thyristor 1600V photo-2
US$ 63 - 85 MOQ: 1 Piece
Key Specifications
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Place of Origin:
Jiangsu, China
Brand Name:
YZPST
Model Number:
KP1900A1600V/3
Payment & Shipping
Payment Methods:
Port of Shipment:
SHANGHAI
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Jiangsu, China
Brand Name YZPST
Model Number KP1900A1600V/3

 High power thyristor phase control 

KP1900A1600V

Product Description

High power silicon controlled thyristor 1600VHigh power silicon controlled thyristor 1600V

 High power silicon controlled thyristor 1600VHigh power silicon controlled thyristor 1600V

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

  1900

 

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

 

  3100

 

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

54000

  

46000

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

14x106

 

A2s

8.3 msec

Latching current

IL

 

    500

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

     1.25

 

V

ITM = 3000 A;

Critical rate of rise of on-state

current (5, 6)

di/dt

 

      300

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

      150

 

A/ms

Switching from VDRM £ 1000 V

 

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

20

 

A

 

Gate current required to trigger all units

IGT

 

300

200

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

4

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

20

 

V

 

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

    2.0

 

ms

ITM = 50 A; VD = 67% VDRM

Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

     250

       

 

ms

ITM > 2000 A; di/dt = 10 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM ;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery current

Irr

 

      120

 

A

ITM > 2000 A; di/dt = 10 A/ms;

VR ³ -50 V

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.017

 

 

oC/W

Double sided cooled

 

Thermal resistamce - case to sink

RQ (c-s)

 

0.003

 

 

oC/W

Double sided cooled *

 

Mounting force

P

 8000

 35.5

10000

44.4

 

lb.

kN

 

Weight

W

 

 

  2.1

953

Lb.

g.

 

 

    

 * Mounting surfaces smooth, flat and greased

     Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

 

 

High power silicon controlled thyristor 1600V

                                                         A:63  mm

                                              B:99 mm

                                              C:89 mm

                                              D:26 mm

Company Information

High power silicon controlled thyristor 1600V 

Quality And Honor

High power silicon controlled thyristor 1600V

Production status

High power silicon controlled thyristor 1600V 

Packaging & Shipping

High power silicon controlled thyristor 1600V

1. We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items).

2. If the items are defective, please notify us within 3 days of delivery.

3Any items must be returned in their original condition to qualify for a refund or replacement.

4. We can ship to you by FedEx/UPS/DHL/TNT/EMS/HK Post. Please contact us directly and we will use your preferred ways. 

5. We are not responsible for any accidents, delays or other issues caused by the forwarder.

6. Any import fees or charges are on the buyer's account

Our Services

High power silicon controlled thyristor 1600V

1. With regard to your inquiry and quotation of products, we will give you the detailed reply within 24 hours.
2.we provide warranty for all the goods from us.

3. We're in this field more than 13 years. If there's any problem, please contact with us,we'll provide suggestion from our engineer to help you solve problem.

4. We have large warehouse for goods. Keep lots of goods in warehouse, so could promise fast delivery.

5. The price of sending  samples is the same. We quate FOB price. You need to bear the freight after it boarded  the ship freight.

Contact us

NAME :John Chang AND Sam Zhou

SKYPE: yzforever0313

TEL: 0086-514-87782298 87782296

FAX: 0086-514-87782297

URL:WWW.YZPST. NET / WWW.PST888.COM

ADD: Room303 Weiheng Building NO.184 Wangyue RD Yangzhou Jiangsu, China

          All emails will be replied within 24 hours. Please leave a message in the Trade Manager. Thank you for ordering and hope you enjoy your purchase here. You commen ts are always welcomed and very important in our long-term  business  corporation.

  We sincerely hope to cooperate with you.For more details, please contact me!

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Business Type
Trading Company
Year Established
2003
Factory Size
Below 1,000 square meters
Total Employees
5 - 10 People

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